Silicon Si uses:
used as a semiconductor material
high power transistor
rectifier
Solar cells, etc.
Product Parameters
| Crystal structure | face centered cubic | ||
| Melting point (°C) | 1420 | ||
| density | 2.4 (g/cm 3 ) | ||
| doping substance | Not adulterated | Doped with B | Doped with P |
| type | I | P | N |
| Resistivity | Ø 1000Ωcm | 10-3~40Ωcm | 10-3~40Ωcm |
| EPD | ≤100∕ cm2 | ≤100∕ cm2 | ≤100∕ cm2 |
| Oxygen content (∕cm3) | ≤1~1.8×10 18 | ≤1~1.8×10 18 | ≤1~1.8×10 18 |
| Carbon content (∕cm3) | ≤5×10 16 | ≤5×10 16 | ≤5×10 16 |
| Dimensions ( mm ) | 10×3, 10×5, 10×10, 15×15 , 2/3/4 inches, etc.Dia50.8mm, Dia76.2mm, Dia100mmSubstrates with special directions and sizes can be customized according to customer needs | ||
| thickness | 0.5mm, 1.0mm | ||
| Dimensional tolerance | <±0.1mm | ||
| Thickness Tolerance | <±0.015mm special requirements can reach <±0.005mm) | ||
| polishing | single or double sided | ||
| Orientation Accuracy of Crystal Plane | ±0.5° | ||
| Edge Orientation Accuracy | 2° (special requirements can reach within 1°) | ||
| orientation | <100>, <110>, <111>, etc. | ||
| Package | Class 100 clean bag, Class 1000 ultra-clean room | ||